Measurement and comparison of AC parameters of silicon (BSR and BSFR) and gallium arsenide (GaAs/Ge) solar cells used in space applications

Solar Energy Materials and Solar Cells

Volumn 60, Issue 2, 2000, Pages 155-166

  Anil Kumar, R ^a   Suresh, M S ^a   Nagaraju, J ^b  

^a INDIAN SPACE RESEARCH ORGANISATION   (India)

^b INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DIFFUSION; ELECTRIC RESISTANCE MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DIODES; SPACE APPLICATIONS; SPECTROSCOPIC ANALYSIS;

DIFFUSION CAPACITANCE; TRANSITION CAPACITANCE;

SILICON SOLAR CELLS;

EID: 0013374871     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(99)00080-X     Document Type: Article

References (3)

1. Millman, Halkias, Integrated Electronics, McGraw-Hill, New York, 1972, pp. 61-66.
2. R.L. Mueller, M.T. Wallace, Peter lles, Scaling nominal solar cell impedances for array design, Conference Records of the 24th IEEE Photovoltaic Specialists Conference, Vol. 2, 1994, pp. 2034-2037.
3. Suresh M.S. Sol. Energy Mater. Sol. Cells. 43:1996;21.