Novel design procedure of broad-band multilayer antireflection coatings for optical and optoelectronic devicesg

Journal of Lightwave Technology

Volumn 16, Issue 5, 1998, Pages 884-890

  Lee, Jungkeun ^c,f   Tanaka, Toshiki ^c,d   Sasaki, Shoji ^c   Uchiyama, Seiji ^a,e   Tsuchiya, Masahiro ^c   Kamiya, Takeshi ^a,b,c  

^a IEEE

^b OSA ^*

^c UNIVERSITY OF TOKYO   (Japan)

^d FUJITSU LABORATORIES LTD   (Japan)

^e Yokohama R and D Laboratories   (Japan)

^f Inha University   (South Korea)

Author keywords

Antireflection coating; Broad band; Electron beam evaporation; Ion beam assist; Multilayer; Optical admittance detuning; Semiconductor laser amplifier

Indexed keywords

ALGORITHMS; ELECTRON BEAMS; MULTILAYERS; OPTICAL GLASS; OPTIMIZATION; OPTOELECTRONIC DEVICES; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICA; TITANIUM DIOXIDE;

ELECTRON BEAM EVAPORATION; ION BEAM ASSIST; OPTICAL ADMITTANCE DETUNING;

ANTIREFLECTION COATINGS;

EID: 0032075366     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.669027     Document Type: Article

References (13)

1. T. Mukai and Y. Yamamoto, "Gain, frequency bandwidth, and saturation output power of AlGaAs DH laser amplifiers," IEEE J. Quantum Electron., vol. QE-17, pp. 1028-1034, Mar. 1981.
2. M. Schell, A. G.Weber, E. Schöll, and D. Bimberg, "Fundamental limits of sub-ps pulse generation by active mode locking of semiconductor lasers: The spectral gain width and the facet reflectivities," IEEE J. Quantum Electron., vol. 27, pp. 1661-1668, June 1991.
3. P. Zorabedian, "Axial-mode instability in tunable external-cavity semi-conductor lasers," IEEE J. Quantum Electron., vol. 30, pp. 1542-1552, July 1994.
4. I.-F. Wu, I. Riant, J.-M. Verdiell, and M. Dagenais, "Real-time in situ monitoring of antireflection coatings for semiconductor laser amplifiers by ellipsometry," IEEE Photon. Technol. Lett., vol. 4, pp. 991-993, Sept. 1992.
5. E. Marclay, D. J. Webb, P. Buchmann, and P. Vettiger, "Stepwise-graded-index multilayer broadband low-reflectivity coating for Al-GaAs/GaAs power lasers," Appl. Phys. Lett., vol. 55, pp. 942-944, Sept. 1989.
6. M. C. Farries, J. Buus, and M. Kearley, "Design and fabrication of two layer antireflection coatings for semiconductor optical amplifiers," Electron. Lett., vol. 26, pp. 1626-1628, Sept. 1990.
7. J. Lee, T. Tanaka, S. Uchiyama, M. Tsuchiya, and T. Kamiya, "Broad-band double-layer antireflection coatings for semiconductor laser amplifiers," Japan J. Appl. Phys., vol. 36, pp. L52-L54, Jan. 1997.
8. D. M. Braun and R. L. Jungerman, "Broadband multilayer antireflection coating for semiconductor laser facets," Opt. Lett., vol. 20, pp. 1154-1156, May 1995.
9. K. Shigihara, T. Aoyagi, S. Kakimoto, M. Aiga, M. Ostubo, and K. Ikeda, "Antireflection coating for laser diodes," Electron. Lett., vol. 31, pp. 1574-1576, Aug. 1995.
10. J. A. Dobrowolski, A. V. Tikhonaravov, M. K. Trubetskov, B. T. Sullivan, and P. G. Verly, "Optimal single-band normal-incidence antireflection coatings," Appl. Opt., vol. 35, pp. 644-658, Feb. 1996.
11. H. A. Macleod, Thin-Film Optical Filters. 2nd ed. Bristol, U.K.: Adam Hilger, 1985, pp. 71-136.
12. S. A. Kumar, C. L. Nagendra, and G. K. Thutupalli, "Low-reflection-loss attenuator optical coatings: Theory and experiment," Appl. Opt., vol. 35, pp. 3047-3051, June 1996.
13. B. R. Bennett, R. A. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE J. Quantum Electron., vol. 26, pp. 113-122, Jan. 1990.