DC conduction behavior of Bi3.15Nd0.85Ti 3O12 thin films grown by RF-magnetron sputtering

Journal of Electroceramics

Volumn 21, Issue 1-4 SPEC. ISS., 2008, Pages 851-854

  Lee, Hai Joon ^a   Ahn, Chang Won ^a   Kang, Sun Hee ^a   Kim, Chang Do ^a   Kim, Ill Won ^a   Kim, Jin Soo ^b   Lee, Jeong Sik ^c  

^a University of Ulsan   (South Korea)

^b Pusan National University   (South Korea)

^c Kyungsung University   (South Korea)

Author keywords

Bi3.15Nd0.85Ti3O12; Conductivity; Ferroelectricity; RF magnetron sputtering

Indexed keywords

BARRIER HEIGHTS; BI3.15ND0.85TI3O12; COERCIVE FIELD; CONDUCTION REGION; CONDUCTIVITY; DC CONDUCTION; HIGH ELECTRIC FIELDS; OHMIC BEHAVIOR; POOLE-FRENKEL EMISSION; PT(111); REMNANT POLARIZATIONS; RF-MAGNETRON SPUTTERING; SCHOTTKY; SI SUBSTRATES;

ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; MAGNETRON SPUTTERING; NEODYMIUM; PLATINUM; POLARIZATION; THIN FILMS;

MAGNETRONS;

EID: 67651099224     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-008-9506-2     Document Type: Article

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