Segregation of Ga during growth of Si single crystal

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 338-340

  Hoshikawa, Takeshi ^a   Huang, Xinming ^a   Uda, Satoshi ^a   Taishi, Toshinori ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SHINSHU UNIVERSITY   (Japan)

Author keywords

A1. Ga doping; A1. Segregation; A2. Czochralski method; A2. Si crystal

Indexed keywords

CRYSTAL GROWTH; CRYSTAL GROWTH FROM MELT; SEGREGATION (METALLOGRAPHY); SILICON; SINGLE CRYSTALS;

CZOCHRALSKI METHOD; GA-DOPING; SI CRYSTAL;

GALLIUM;

EID: 33646364071     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.01.026     Document Type: Article

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