Characterization of the initial rapid decay on light-induced carrier lifetime and cell performance degradation of Czochralski-grown silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 5 A, 2003, Pages 2564-2568

  Hashigami, Hiroshi ^a   Dhamrin, Marwan ^a   Saitoh, Tadashi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Activation energy; Carrier lifetime; Cz Si; Decay time; Defect; Degradation; Interface state; Solar cell

Indexed keywords

ACTIVATION ENERGY; PASSIVATION; SILICON SOLAR CELLS; SILICON WAFERS; SUBSTRATES;

DECAY TIME;

DEGRADATION;

EID: 0038719159     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2564     Document Type: Article

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