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Volumn 56, Issue 6, 2007, Pages 3483-3487
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Characterization of Ni/Au GaN Schottky contact base on I-V-T and C-V-T measurements
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Author keywords
GaN; Schottky diode; Thermion field emission; Thin surface barrier model
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Indexed keywords
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EID: 34347269629
PISSN: 10003290
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (7)
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References (13)
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