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Volumn 482, Issue 1-2, 2005, Pages 86-89

Effect of rf power on the photovoltaic properties of boron-doped amorphous carbon/n-type silicon junction fabricated by plasma enhanced chemical vapor deposition

Author keywords

Amorphous carbon; Photovoltaic; Plasma enhanced CVD

Indexed keywords

BORON; CARRIER CONCENTRATION; DOPING (ADDITIVES); HYDROGENATION; PHOTOVOLTAIC EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR JUNCTIONS; SILICON;

EID: 17744392021     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.123     Document Type: Conference Paper
Times cited : (46)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.