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Volumn 482, Issue 1-2, 2005, Pages 86-89
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Effect of rf power on the photovoltaic properties of boron-doped amorphous carbon/n-type silicon junction fabricated by plasma enhanced chemical vapor deposition
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Author keywords
Amorphous carbon; Photovoltaic; Plasma enhanced CVD
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Indexed keywords
BORON;
CARRIER CONCENTRATION;
DOPING (ADDITIVES);
HYDROGENATION;
PHOTOVOLTAIC EFFECTS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTOR JUNCTIONS;
SILICON;
AMORPHOUS CARBON;
ELECTRICAL PROPERTIES;
PHOTOVOLATAIC;
TRIMETHYLBORON (TMB);
CARBON;
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EID: 17744392021
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2004.11.123 Document Type: Conference Paper |
Times cited : (46)
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References (9)
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