Difference in the photocurrent of semiconductor photodiodes depending on the polarity of current measurement through a contribution from the photoemission current

Metrologia

Volumn 40, Issue 1 SPEC., 2003, Pages

  Saito, T ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; ELECTRODES; ELECTROMETERS; ELECTRON EMISSION; LIGHT EMISSION; PHOTOCURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

GALLIUM ARSENIC PHOSPHIDE; PHOTOEMISSION CURRENT;

PHOTODIODES;

EID: 0037228493     PISSN: 00261394     EISSN: None     Source Type: Journal    
DOI: 10.1088/0026-1394/40/1/003     Document Type: Article

References (6)

1. Saito T and Onuki H 1987 TELL-TERAS Activity Report 1980-1986 Electrotechnical Lab., Tsukuba pp 128-30
2. Tomimasu T, Noguchi T, Sugiyama S, Yamazaki T, Mikado T and Chiwaki M 1983 IEEE Trans. Nucl. Sci. NS-30 3133-5
3. Sugiyama S, Mikado T, Chiwaki M, Yamada K, Ohgaki H, Suzuki R, Sei N, Noguchi T and Yamazaki T 1994 Proc. Asian Forum on Synchrotron Radiation Jpn. Soc. for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute, Tokyo pp 204-15
4. Onuki H, Yagi K, Awazu K, Yamada T, Saito T, Yuri M, Inoue Y and Ishizaka S 1996 Proc. SPIE 2873 90-5
5. Model 617 Programmable Electrometer Instruction Manual 617-901-01 Rev. A, Keithley Instruments, Inc., Cleveland, 1984
6. Palik E D (ed) 1985 Handbook of Optical Constants of Solids (New York: Academic)