Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

Proceedings of the National Academy of Sciences of the United States of America

Volumn 106, Issue 27, 2009, Pages 10907-10911

  Shakhvorostov, Dmitry ^a   Nistor, Razvan A ^a   Krusin Elbaum, Lia ^b   Martyna, Glenn J ^b   Newns, Dennis M ^b   Elmegreen, Bruce G ^b   Liu, Xiao Hu ^b   Hughes, Zak E ^a   Paul, Sujata ^b   Cabral, Cyril ^b   Raoux, Simone ^c   Shrekenhamer, David B ^d   Basov, Dimitri N ^d   Song, Young ^a   Müser, Martin H ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM ALMADEN RESEARCH CENTER   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Ab initio simulations; Ac conductivity; Electronic phase transitions; Structural phase change

Indexed keywords

METAL;

ARTICLE; CORRELATION ANALYSIS; ELECTRIC CONDUCTIVITY; ELECTRONICS; PRESSURE; PRIORITY JOURNAL; SEMICONDUCTOR; SIMULATION; TEMPERATURE STRESS;

EID: 67650492466     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.0812942106     Document Type: Article

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