A 0.15 GHz cryogenic SiGe MMIC LNA

IEEE Microwave and Wireless Components Letters

Volumn 19, Issue 6, 2009, Pages 407-409

  Bardin, Joseph C ^a   Weinreb, Sander ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

BiCMOS; cryogenic; heterojunction bipolar transistors (HBT); integrated circuit (IC); low temperature; low noise amplifier (LNA); noise; SiGe

Indexed keywords

BICMOS; HETEROJUNCTION BIPOLAR TRANSISTORS (HBT); LOW TEMPERATURE; LOW-NOISE AMPLIFIER (LNA); NOISE; SIGE;

AUDIO FREQUENCY AMPLIFIERS; BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; CRYOGENICS; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; MICROWAVE CIRCUITS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SILICON ALLOYS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 67650427110     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2009.2020041     Document Type: Article

References (8)

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