SCOPUS 정보 검색 플랫폼

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 401-406

Silicon doped with sulfur as a detector material for high speed infrared image converters

(5) Astrov, Yu A a Portsel, L M a Lodygin, A N a Shuman, V B a Beregulin, E V a

a IOFFE INSTITUTE (Russian Federation)

Author keywords

Doping silicon with sulfur; IR imaging; Silicon detectors

Indexed keywords

DEFECTS; IMAGE CONVERTERS; INFRARED IMAGING; LIQUEFIED GASES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SULFUR;

DEEP IMPURITIES; DETECTOR MATERIALS; GAS DISCHARGE; HALL MEASUREMENTS; HIGH-TEMPERATURE DIFFUSION; RADIATION DOPING; SHALLOW DONORS; TEMPORAL RESOLUTION;

SILICON DETECTORS;

EID: 36048994628 PISSN: 10120394 EISSN: 16629779 Source Type: Book Series
DOI: 10.4028/www.scientific.net/SSP.108-109.401 Document Type: Conference Paper

Times cited : (4)

References (13)

1
- 84954554330
- Yu. A. Astrov, V. V. Egorov, V. M. Murugov, G. Paritskii, L. M. Portsel, S. M. Ryvkin, and Yu. N. Sheremet’ev. Sov. Phys. Tech. Phys. Vol. 3 (1977), p. 701.
- (1977) Sheremet’ev. Sov. Phys. Tech. Phys , vol.3
- Astrov, Y.A.¹ Egorov, V.V.² Murugov, V.M.³ Paritskii, G.⁴ Portsel, L.M.⁵ Ryvkin, S.M.⁶ Yu, N.⁷

2
- 0034860583
- V. P. Lazarchuk, D. N. Litvin, V. V. Mis’ko, V. M. Murugov, S. I. Petrov, A. V. Senik, Yu. N. Sheremetiev, and E. V. Roos. Proc. SPIE Vol. 4306 (2003), p. 273.
- (2003) Proc. SPIE , vol.4306
- Lazarchuk, V.P.¹ Litvin, D.N.² Mis’Ko, V.V.³ Murugov, V.M.⁴ Petrov, S.I.⁵ Senik, A.V.⁶ Sheremetiev, Y.N.⁷ Roos, E.V.⁸

3
- 0000910406
- L. M. Portsel, Yu. A. Astrov, I. Reimann, E. Ammelt, and H.-G. Purwins. J. Appl. Phys., Vol. 85 (1999), p. 3960.
- (1999) J. Appl. Phys. , vol.85
- Portsel, L.M.¹ Astrov, Y.A.² Reimann, I.³ Ammelt, E.⁴ Purwins, H.-G.⁵

4
- 0007231302
- D. L. Camphausen, H. M. James, and R. J. Sladek. Phys. Rev. B, Vol. 2 (1970), p. 1899.
- (1970) Phys. Rev. B , vol.2
- Camphausen, D.L.¹ James, H.M.² Sladek, R.J.³

5
- 4243667009
- H. G. Grimmeiss and B. Skarstam. Phys. Rev. B, Vol. 23 (1981), p. 1947.
- (1981) Phys. Rev. B , vol.23
- Grimmeiss, H.G.¹ Skarstam, B.²

6
- 0347920511
- N. Sclar. Prog. Quant. Electr. Vol. 9 (1984), p. 149.
- (1984) Prog. Quant. Electr , vol.9
- Sclar, N.¹

7
- 0018944747
- D. H. Alexander, R. Baron, and O. M. Stafsudd. IEEE Transactions on electron devices, Vol. ED-27 (1980), p. 71.
- (1980) IEEE Transactions on Electron Devices , vol.ED-27
- Alexander, D.H.¹ Baron, R.² Stafsudd, O.M.³

8
- 84954497639
- Physico-Technical Institute Report No. 1255, in Russian
- Yu. A. Astrov, A. F. Ioffe Physico-Technical Institute Report No. 1255 (1988), in Russian.
- (1988)
- Astrov, Y.A.¹ Ioffe, A.F.²

9
- 0031075759
- L. M. Portsel, Yu. A. Astrov, I. Reimann, and H.-G. Purwins. J. Appl. Phys., Vol. 81 (1997), p. 1077.
- (1997) J. Appl. Phys , vol.81
- Portsel, L.M.¹ Astrov, Y.A.² Reimann, I.³ Purwins, H.-G.⁴

10
- 0035429840
- V. T. Tulanov, Kh. B. Siyabekov, A. Sh. Davletova, and K. A. Ortaeva. Semiconductors, Vol. 35 (2001), p. 970.
- (2001) Semiconductors , vol.35
- Tulanov, V.T.¹ Siyabekov, K.B.² Davletova, A.S.³ Ortaeva, K.A.⁴

11
- 0019597833
- N. Sclar. J. Appl. Phys., Vol. 52 (1981), p. 5207.
- (1981) J. Appl. Phys. , vol.52
- Sclar, N.¹

12
- 84954543207
- E. G. Guk, A.V. El'tsov, S.F. Luizova, V.B. Shuman and T.A. Yurre. Techn. Phys. Lett. Vol.11 (1985), p.93.
- (1985) Techn. Phys. Lett , vol.11
- Guk, E.G.¹ El'tsov, A.V.² Luizova, S.F.³ Shuman, V.B.⁴ Yurre, T.A.⁵

13
- 84954539102
- V. A. Kozlov and V. V. Kozlovsky. Semiconductors, Vol. 25 (1991), p. 735.
- (1991) Semiconductors , vol.25
- Kozlov, V.A.¹ Kozlovsky, V.V.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.