Inductively coupled plasma-reactive ion etching of InSb using C H 4 / H2 /Ar plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 4, 2009, Pages 681-685

  Zhang, Guo Dong ^a   Sun, Wei Guo ^a   Xu, Shu Li ^a   Zhao, Hong Yan ^a   Su, Hong Yi ^a   Wang, Hai Zhen ^a  

^a Luoyang Optoelectro Technology Development Center   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC STRUCTURE; AR PLASMAS; ETCH RATES; ETCHED SURFACE; ICP-RIE; INFRARED FOCAL PLANE ARRAYS; LARGE FORMAT; PROCESS PARAMETERS; RADIO FREQUENCY POWER; SIDEWALL ANGLES; TOTAL PRESSURE;

ARGON; INDUCTIVELY COUPLED PLASMA; OPTOELECTRONIC DEVICES; PHOTORESISTS; WET ETCHING;

REACTIVE ION ETCHING;

EID: 67650340737     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3143664     Document Type: Article

References (6)

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