Chromium doping of epitaxial PbZr0.2Ti0.8O 3 thin films

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Feigl, L ^a,c   Pippel, E ^a   Pintilie, L ^b   Alexe, M ^a   Hesse, D ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^c UNIVERSITY OF POTSDAM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM DOPING; CR CONTENT; DIELECTRIC CONSTANTS; ELASTIC RELAXATION; EPITAXIAL FERROELECTRIC; HIGH RESOLUTION; MICRO-STRUCTURAL CHARACTERIZATION; PZT; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; VOLTAGE DEPENDENCE; WIDE-GAP SEMICONDUCTOR;

CHROMIUM; DEPOSITION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRONIC PROPERTIES; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; PULSED LASER DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING LEAD COMPOUNDS; THIN FILMS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 67650236721     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3141733     Document Type: Conference Paper

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