Effects of sapphire substrate misorientation on the GaN-based light emitting diode grown by metalorganic vapour phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2007-2009

  Nakamura, A ^a   Yanagita, N ^a   Murata, T ^a   Hoshino, K ^a   Tadatomo, K ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL FLUCTUATIONS; CONCENTRATION OF; CRYSTALLINE QUALITY; GAN BASED LED; GAN LAYERS; INGAN/GAN MQWS; METAL-ORGANIC VAPOUR PHASE EPITAXY; MIS-ORIENTATION; MISORIENTATION ANGLE; MOVPE; SAPPHIRE SUBSTRATES; STRUCTURAL AND OPTICAL PROPERTIES;

CRYSTAL GROWTH; GALLIUM NITRIDE; HOLE CONCENTRATION; INDIUM; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; ORGANIC LIGHT EMITTING DIODES (OLED); PHYSICAL OPTICS; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 67649949455     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778681     Document Type: Conference Paper

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