Effects of N incorporation on the structural and photoluminescence characteristics of GaSbN/GaSb single quantum wells

Journal of Applied Physics

Volumn 101, Issue 11, 2007, Pages

  Iyer, S ^a   Wu, L ^a   Li, J ^a   Potoczny, S ^a   Matney, K ^b   Kent, P R C ^c  

^a NORTH CAROLINA A AND T STATE UNIVERSITY   (United States)

^b Bede Scientific Inc   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; FULL WIDTH AT HALF MAXIMUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS;

ANNIHILATION; SINGLE QUANTUM WELLS; SPACE MAPS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34250649381     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2734081     Document Type: Article

References (14)

1. M. Henini, Dilute Nitride Semiconductors (Elsevier, UK, 2005).
2. A. Belabbes, M. Ferhat, and A. Zaoui, Appl. Phys. Lett. 0003-6951 10.1063/1.2196049 88, 152109 (2006).
3. P. H. Jefferson, T. D. Veal, L. F. J. Piper, B. R. Bennett, C. F. McConvilleb, B. N. Murdin, L. Buckle, G. W. Smith, and T. Ashley, Appl. Phys. Lett. 0003-6951 10.1063/1.2349832 89, 111921 (2006).
4. T. D. Veal, L. F. J. Piper, S. Jollands, B. R. Bennett, P. H. Jefferson, P. A. Thomas, C. F. McConville, B. N. Murdin, L. Buckle, G. W. Smith, and T. Ashley, Appl. Phys. Lett. 0003-6951 10.1063/1.2058224 87, 132101 (2005).
5. L. Buckle, B. R. Bennett, S. Jollands, T. D. Veal, N. R. Wilson, B. N. Murdin, C. F. McConville, and T. Ashley, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2004.12.148 278, 188 (2005).
6. W. Li, J. B. Heroux, and W. I. Wang, J. Appl. Phys. 0021-8979 10.1063/1.1606514 94, 4248 (2003).
7. S. Iyer, S. Hegde, and K. K. Ali Abul-Fadl, Phys. Rev. B 0163-1829 10.1103/PhysRevB.47.1329 47, 1329 (1993).
8. B. S. Ma, F. H. Su, K. Ding, G. H. Li, Y. Zhang, A. Mascarenhas, H. P. Xin and C. W. Tu, Phys. Rev. B 0163-1829 10.1103/PhysRevB.71.045213 71, 045213 (2005).
9. S. Francoeur, S. A. Nikishin, C. Jin, Y. Qiu, and H. Temkin, Appl. Phys. Lett. 0003-6951 10.1063/1.124748 75, 1538 (1999).
10. P. R. C. Kent and A. Zunger, Phys. Rev. B 0163-1829 10.1103/PhysRevB.64. 115208 64, 115208 (2001).
11. H. P. Xin and C. W. Tu, Appl. Phys. Lett. 0003-6951 10.1063/1.126005 76, 1267 (2000).
12. P. R. C. Kent, in Dilute Nitride Semiconductors, edited by, M. Henini, (Elsevier, London, UK, 2005).
13. B. Yong Zhang, Phys. Rev. B 62, 4493 (2000).
14. L. Bellaiche, S. -H Wei, and A. Zunger, Appl. Phys. Lett. 0003-6951 10.1063/1.119232 70, 3558 (1997).