Comparative study on leakage current of power-gated SRAMs for 65-nm, 45-nm, and 32-nm technology nodes

Journal of Computers

Volumn 3, Issue 3, 2008, Pages 39-47

  Lee, Duk Hyung ^a   Kwak, Dong Kone ^a   Min, Kyeong Sik ^a  

^a Kookmin University   (South Korea)

Author keywords

Leakage; Low leakage; Memory; Oxide tunneling; SRAM; Sub threshold leakage

Indexed keywords

DATA STORAGE EQUIPMENT; LEAKAGE (FLUID); LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

AREA OVERHEAD; COMPARATIVE STUDIES; DRAIN INDUCED BARRIER LOWERING EFFECTS; LOW LEAKAGE; POWER SWITCHES; SUB-THRESHOLD LEAKAGE; TECHNOLOGY NODES; TUNNELING LEAKAGE;

STATIC RANDOM ACCESS STORAGE;

EID: 67649657366     PISSN: 1796203X     EISSN: None     Source Type: Journal    
DOI: 10.4304/jcp.3.3.39-47     Document Type: Article

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