Efficient and large-current-output boosted voltage generators with non-overlapping-clock-driven auxiliary pumps for sub-1-V memory applications

IEICE Transactions on Electronics

Volumn E87-C, Issue 7, 2004, Pages 1208-1213

  Min, Kyeong Sik ^a   Kim, Young Hee ^b   Kim, Daejeong ^a   Kim, Dong Myeong ^a   Ahn, Jin Hong ^c   Chung, Jin Yong ^c,d  

^a Kookmin University   (South Korea)

^b Changwon National University   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

^d Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Charge pumps; DRAM; Low voltage; Voltage generators

Indexed keywords

AMPLIFIERS (ELECTRONIC); COMPUTER PROGRAMMING; ELECTRIC GENERATORS; SUBSTRATES; THRESHOLD VOLTAGE; TRANSISTORS;

CHARGE PUMPS; HOT-CARRIER PROGRAMMING; VOLTAGE GENERATORS;

FLASH MEMORY;

EID: 3142709366     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

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4. K. Min and J. Chung, "A fast pump-down VBB generator for sub-1.5-V DRAMs," IEEE J. Solid-State Circuits, vol.36, no.7, pp.1154-1157, July 2001.
5. K. Min, Y. Kim, D. Kim, D. Kim, and J. Ahn, "A large-current-output boosted voltage generator with non-overlapping clock control for sub-1-V memory applications," Asia-South-Pacific Design Automation Conference, pp.288-291, Yokohama, Japan, Jan. 2004.
6. K. Min, D. Kim, D.M. Kim, Y. Kim, J. Ahn, and J. Chung, "A CMOS charge pump with large output current for sub-1-V negative-word-line DRAM's," Proc. 10th Korean conference on semiconductors, pp.269-270, Seoul, Korea, Feb. 2003.