SCOPUS 정보 검색 플랫폼

Volumn 4, Issue 6, 2009, Pages 491-497

Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In

(4) Zervos, Matthew a Tsokkou, Demetra a Pervolaraki, Maria a Othonos, Andreas a

a UNIVERSITY OF CYPRUS (Cyprus)

Author keywords

Chemical vapour deposition; Indium nitride; Indium oxide; Low temperature; Nanocrystals

Indexed keywords

AMMONIUM CHLORIDE; AVERAGE DIAMETER; CHEMICAL VAPOUR DEPOSITION; DIRECT OXIDATION; GAS FLOWS; GAS STREAMS; HIGH TEMPERATURE; HIGH YIELD; INDIUM NITRIDE; INDIUM OXIDE; LOW TEMPERATURE; LOW TEMPERATURE GROWTH; NANOPYRAMIDS; SI (1 1 1);

AERODYNAMICS; AMMONIUM COMPOUNDS; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; FLOW OF GASES; GASES; NANOCRYSTALS; NITRIDES; OXIDATION; SILICON; SUBLIMATION;

INDIUM;

EID: 67649532664 PISSN: 19317573 EISSN: 1556276X Source Type: Journal
DOI: 10.1007/s11671-009-9266-1 Document Type: Article

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.