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Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

Transport properties of MgO magnetic tunnel junctions

(6) Dimitrov, D V a Gao, Zheng a Wang, Xiaobin a Jung, Wonjoon a Lou, Xiaohua a Heinonen, Olle a

a SEAGATE TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPARALLEL STATE; DIFFERENTIAL CONDUCTANCES; DIFFERENTIAL CONDUCTIVITY; HIGH QUALITY; HIGH VOLTAGE BIAS; LARGE POPULATION; MAGNETIC TUNNEL JUNCTION; MGO BARRIER; NANOPILLARS; SCATTERING MECHANISMS; THEORETICAL MODELS; TUNNEL BARRIER; TUNNELING MAGNETORESISTANCE;

ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; SCATTERING; SEMICONDUCTOR JUNCTIONS; TRANSPORT PROPERTIES; TUNNELING (EXCAVATION); TUNNELS;

TUNNEL JUNCTIONS;

EID: 67649525982 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3137197 Document Type: Article

Times cited : (8)

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