A three-dimensional mixed finite-element approximation of the semiconductor energy-transport equations

SIAM Journal on Scientific Computing

Volumn 31, Issue 2, 2008, Pages 1120-1140

  Gadau, Stephan ^a   Jüngel, Ansgar ^b  

^a JOHANNES GUTENBERG UNIVERSITY   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Cross diffusion system; Decoupled iteration scheme; Dual entropy variables; Energy transport equations; Mixed finite elements; Multigate metal semiconductor field effect transistor; Raviart thomas nedelec elements

Indexed keywords

BOUNDARY CONDITIONS; ELECTRIC POTENTIAL; ENTROPY; FIELD EFFECT TRANSISTORS; ITERATIVE METHODS; NUMERICAL METHODS;

CROSS-DIFFUSION SYSTEM; DECOUPLED ITERATION SCHEME; DUAL-ENTROPY VARIABLE; ENERGY-TRANSPORT EQUATIONS; ENTROPY VARIABLES; ITERATION SCHEMES; MIXED FINITE ELEMENTS; MULTIGATE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NEDELEC ELEMENTS; RAVIART-THOMAS; RAVIART-THOMAS-NEDELEC ELEMENT;

FINITE ELEMENT METHOD;

EID: 67649497137     PISSN: 10648275     EISSN: None     Source Type: Journal    
DOI: 10.1137/070706276     Document Type: Article

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