A mixed finite-element discretization of the energy-transport model for semiconductors

SIAM Journal on Scientific Computing

Volumn 24, Issue 6, 2003, Pages 2058-2075

  Holst, Stefan ^a   Jüngel, Ansgar ^a   Pietra, Paola ^b  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b CNR   (Italy)

Author keywords

Exponential fitting; Mixed finite elements; Semiconductors; Two dimensional metal semiconductor field effect transistor

Indexed keywords

APPROXIMATION THEORY; BOUNDARY CONDITIONS; ELECTROSTATICS; MATHEMATICAL MODELS; POISSON EQUATION; SEMICONDUCTOR DEVICES;

BOLTZMANN EQUATION; ENERGY-TRANSPORT MODEL; EXPONENTIAL FITTING; HILBERT EXPANSION METHOD; SPHERICAL HARMONIC EXPANSION; TWO-DIMENSIONAL METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR;

FINITE ELEMENT METHOD;

EID: 0346946958     PISSN: 10648275     EISSN: None     Source Type: Journal    
DOI: 10.1137/S1064827501396440     Document Type: Article

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