Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 213-217

  Branlard, J ^a   Aboud, S ^a,b   Goodnick, S ^c   Saraniti, M ^a,b  

^a Illinois Institute of Technology   (United States)

^b RUSH MEDICAL COLLEGE   (United States)

^c Arizona State University   (United States)

Author keywords

3D particle based simulation; dual gate structures; frequency analysis; full band; GaAs MESFET

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM;

DUAL-GATE STRUCTURE; FREQUENCY ANALYSIS; FULL BAND; GAAS MESFET; PARTICLE-BASED SIMULATION;

MESFET DEVICES;

EID: 25144438929     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011427.63034.4e     Document Type: Article

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