Operation of power semiconductors under transient thermal conditions: Thermal fatigue reliability and mechanical aspects

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1677-1682

  Forster, S ^a,b   Lequeu, T ^a   Jerisian R ^a  

^a STMICROELECTRONICS   (France)

^b CLOES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK INITIATION; DEGRADATION; ELECTRIC COMMUTATION; FAILURE ANALYSIS; FATIGUE OF MATERIALS; LEAKAGE CURRENTS; POWER ELECTRONICS; RELIABILITY;

THERMAL FATIGUE; THERMO-MECHANICAL FORCES;

SEMICONDUCTOR DEVICES;

EID: 0035457077     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00185-8     Document Type: Article

References (8)

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