Sub-threshold behavior in nanoparticle-dispersed poly(3-hexylthiophene) FET

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5522, Issue , 2004, Pages 89-96

  Yoshida, M ^a   Uemura, S ^a   Hoshino, S ^a   Kodzasa, T ^a   Kamata, T ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Nanoparticle dispersion; Off current; On off ratio; Poly(3 hexylthiophene); Polymer FET; Sub threshold behavior

Indexed keywords

AMMONIA; ELECTRONIC EQUIPMENT; ELECTRONS; FABRICATION; IONIZATION; NANOSTRUCTURED MATERIALS; PLASTIC FILMS; SEMICONDUCTING ORGANIC COMPOUNDS;

NANOPARTICLE DISPERSION; OFF CURRENT; ON-OFF RATIO; POLY(3-HEXYLTHIOPHENE); POLYMER FET; SUB-THRESHOLD BEHAVIOR;

FIELD EFFECT TRANSISTORS;

EID: 13444291432     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.559103     Document Type: Conference Paper

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