Characteristic fluctuation dependence on discrete dopant for 16nm SOI FinFETs at different temperature

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Volumn , Issue , 2007, Pages 365-368

  Li, Yiming ^a   Hwang, Chih Hong ^a   Yu, Shao Ming ^a   Huang, Hsuan Ming ^a   Yeh, Ta Ching ^a   Cheng, Hui Wen ^a   Chen, Hung Ming ^b   Hwang, Jiunn Ren ^b   Yang, Fu Liang ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COST EFFECTIVENESS; FINFET; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

CARRIER TRANSPORTATION; CHARACTERISTIC FLUCTUATIONS; DOPANT CONCENTRATIONS; ELECTRICAL CHARACTERISTIC; POSITION FLUCTUATIONS; SILICON-ON- INSULATORS (SOI); TEMPERATURE CONDITIONS; THREE-DIMENSIONAL CHANNELS;

SUBSTRATES;

EID: 67649325252     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-211-72861-1_88     Document Type: Conference Paper

References (5)

1. S. Roy and A. Asenov. "Where do the dopants go?,". Science, Vol. 309. pp. 388-390, 2005.
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3. F.-L. Yang et al., "35 nm CMOS,". Tech. Dig. Symp. VLSI Tech., pp. 104-105. 2002.
4. F.-L. Yang et. al., "Strained FIP-SOI (FinFET/FD/PD-SOl) for sub-65 nm CMOS scaling,". Tech. Dig. Symp. VLSI Tech., pp. 137-138.2003.
5. Y. Li, H.-M. Chou, and J.-W. Lee, 'Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFF.Ts". IEEE Trans. Nanotech., Vol.4. 510-516. 2005.