Controllable growth of nanocrystalline diamond films by Hot-Filament chemical vapor deposition method

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 2, 2009, Pages 1062-1065

  Li, Junjie ^a   Li, Yunlong ^a   Wang, Qiang ^a   Yang, Yang ^a   Gu, Changzhi ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Bias current; CH4 concentration; Nanocrystalline diamond films

Indexed keywords

AVERAGE GRAIN SIZE; CH4 CONCENTRATION; CONTROLLABLE GROWTH; CRYSTALLINITY; GROWTH PROCESS; HIGH TEMPERATURE; HOT-FILAMENT CHEMICAL VAPOR DEPOSITION; NANOCRYSTALLINE DIAMOND FILMS; NCD FILMS; PHASE PURITY; RAMAN SCATTERING SPECTROSCOPY; SEM; SI WAFER; THERMAL FIELD;

CHEMICAL VAPOR DEPOSITION; DIAMOND CUTTING TOOLS; DIAMONDS; EMISSION SPECTROSCOPY; FILAMENTS (LAMP); NANOCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; VAPORS; X RAY DIFFRACTION;

DIAMOND FILMS;

EID: 67649280112     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.C088     Document Type: Conference Paper

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