Photoluminescence study of nanocrystalline-Si(Ge) embedded in mesoporous silica

Solid-State Electronics

Volumn 53, Issue 8, 2009, Pages 862-864

  Adnane, Bouchaib ^a   Lai, Yi Fan ^b   Shieh, Jia Min ^b   Holtz, Per Olof ^a   Ni, Wei Xin ^a,b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Mesoporous silica; Nanocrystals; Photoluminescence; Power dependence; Thermal annealing

Indexed keywords

CARRIER TRANSFER PROCESS; EXCITATION POWER; GE NANOCRYSTALS; INTENSITY DEPENDENCE; KINETIC LIMITATIONS; MESOPOROUS SILICA; MESOPOROUS SILICAS; NANOCRYSTALLINE; PHOTOEXCITED CARRIERS; PHOTOLUMINESCENCE PROPERTIES; PL INTENSITY; POWER DEPENDENCE; SI NANOCRYSTAL; SUBLINEAR BEHAVIORS; SUPERLINEAR; THERMAL ANNEALING;

GERMANIUM; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SILICA; SILICON;

NANOCRYSTALS;

EID: 67649236175     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.04.014     Document Type: Article

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