Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by ammonia-source molecular beam epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2129-2132

  Hoshi, Takuya ^a,c   Koyama, Takahiro ^a,b,c   Sugawara, Mariko ^c   Uedono, Akira ^c   Kaeding, John F ^b,d   Sharma, Rajat ^b,d   Nakamura, Shuji ^b,d   Chichibu, Shigefusa F ^a,b,c  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; DEFECT COMPLEX; DONOR-ACCEPTOR PAIRS; EMISSION BANDS; ENERGY SEPARATIONS; EPILAYERS GROWN; FIRST EXCITED STATE; FLUX RATIO; INTENSITY RATIO; LUMINESCENCE INTENSITY; NEAR BAND EDGE EMISSIONS; POSITRON ANNIHILATION MEASUREMENTS; S PARAMETERS;

BINDING ENERGY; DEFECT DENSITY; DEFECTS; EPILAYERS; EPITAXIAL GROWTH; LUMINESCENCE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

ALUMINUM;

EID: 67649207297     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778473     Document Type: Conference Paper

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