A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 410-413

  Suda, J ^a   Horita, M ^a   Armitage, R ^a   Kimoto, T ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

A1. Dislocation; A1. Stacking fault; B1. AlN; B1. Nonpolar; B1. Polytype; B1. SiC

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; EPILAYERS; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

EPILAYER ORIENTATIONS; PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY; SEMICONDUCTOR GROWTH DIRECTIONS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33947307312     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.287     Document Type: Article

References (9)

1. Waltereit P., Brandt O., Trampert A., Grahn H.T., Menniger J., Ramsteiner M., Reiche M., and Ploog K.H. Nature 406 (2000) 865
2. Ng H.M. Appl. Phys. Lett. 80 (2002) 4369
3. Haskell B.A., Wu F., Craven M.D., Matsuda S., Fini P.T., Fujii T., Fujito K., Denbaars S.P., Speck J.S., and Nakamura S. Appl. Phys. Lett. 83 (2003) 644
4. Brandt O., Sun Y.J., Däweritz L., and Ploog K.H. Physica E 23 (2004) 339
5. Onojima N., Suda J., and Matsunami H. Jpn. J. Appl. Phys. 41 (2002) L1348
6. Onojima N., Suda J., Kimoto T., and Matsunami H. Appl. Phys. Lett. 83 (2003) 5208
7. Armitage R., Suda J., and Kimoto T. Appl. Phys. Lett. 88 (2005) 011908
8. Nakamura S., Kimoto T., Matsunami H., Tanaka S., Teraguchi N., and Suzuki A. Appl. Phys. Lett. 76 (2000) 3412
9. Horita M., Suda J., and Kimoto T. Appl. Phys. Lett. 89 (2006) 112117