Model of hopping dc conductivity via nearest neighbor boron atoms in moderately compensated diamond crystals

Solid State Communications

Volumn 149, Issue 31-32, 2009, Pages 1248-1253

  Poklonski, N A ^a   Vyrko, S A ^a   Zabrodskii, A G ^b  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

A. Boron doped diamond; B. Moderate compensation; C. DC hopping conductivity; D. Activation energy

Indexed keywords

A. BORON DOPED DIAMOND; ACCEPTOR LEVELS; ACCEPTOR STATE; B. MODERATE COMPENSATION; BORON ATOM; C. DC HOPPING CONDUCTIVITY; CALCULATED VALUES; CHARGE STATE; COMPENSATION RATIO; CRYSTALLINE MATRICES; D. ACTIVATION ENERGY; DC CONDUCTIVITY; DIAMOND CRYSTALS; EXPERIMENTAL DATA; EXTERNAL ELECTRIC FIELD; GAUSSIAN FLUCTUATIONS; HOLE TRANSPORTS; HOPPING CONDUCTANCE; HOPPING CONDUCTIVITY; IMPURITY IONS; INSULATOR-METAL PHASE; LATTICE SITES; NEAREST NEIGHBORS; NONSTOICHIOMETRIC; PREEXPONENTIAL FACTOR; QUASICLASSICAL APPROXIMATION; SIMPLE-CUBIC LATTICES; THERMAL ACTIVATION ENERGIES; THERMALLY ACTIVATED; TRANSITION TEMPERATURE;

ATOMS; BORON; CRYSTAL IMPURITIES; DIAMONDS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; METAL INSULATOR TRANSITION;

ACTIVATION ENERGY;

EID: 67649203441     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.05.031     Document Type: Article

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