A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge: Ga

Physics of the Solid State

Volumn 42, Issue 3, 2000, Pages 441-449

  Poklonskii N A ^a   Lopatin, S Yu ^a   Zabrodskii A G ^b  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034342799     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1131228     Document Type: Article

References (38)

1. A. Miller and E. Abrahams, Phys. Rev. 120, 745 (1960).
2. I. P. Zvyagin, Kinetic Phenomena in Disordered Semiconductors (Mosk. Gos. Univ., Moscow, 1984).
3. Hopping Transport in Solids, Ed. by M. Pollak and B. Shklovskiǐ (Elsevier, Amsterdam, 1990).
4. H. Fritzsche and M. Cuevas, Phys. Rev. 119, 1238 (1960).
5. A. G. Zabrodskiǐ, A. G. Andreev, and M. V. Alekseenko, Fiz. Tekh. Poluprovodn. (Leningrad) 26, 431 (1992).
6. A. G. Zabrodskiǐ and A. G. Andreev, Int. J. Mod. Phys. B 8, 883 (1994).
7. A. I. Gorshkov, Zh. Tekh. Fiz. 46, 1718 (1976).
8. B. I. Shklovskiǐ and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984).
9. N. V. Lien, B. I. Shklovskiǐ, and A. L. Éfros, Fiz. Tekh. Poluprovodn. (Leningrad) 13, 2192 (1979).
10. E. M. Conwell, Phys. Rev. 103, 51 (1956).
11. P. Csavinszky, Phys. Rev. 119, 1605 (1960).
12. B. Z. Spivak, V. A. Kharchenko, and B. I. Shklovskiǐ, Fiz. Tekh. Poluprovodn. (Leningrad) 19, 799 (1985).
13. J. P. Stark, Solid State Diffusion (John Wiley and Sons, New York, 1976; Énergiya, Moscow, 1980).
14. N. A. Poklonskiǐ and V. F. Stelmakh, Phys. Status Solidi B 117, 93 (1983).
15. N. A. Poklonskiǐ, A. I. Syaglo, and G. Biskupski, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 33, 415 (1999).
16. N. L. Lavrik and V. P. Voloshin, Zh. Fiz. Khim. 70, 1140 (1996).
17. S. D. Baranovskiǐ, T. Faber, F. Hensel, et al., Phys. Status Solidi B 205, 87 (1998).
18. N. A. Poklonskiǐ, V. F. Stelmakh, V. D. Tkachev, et al., Phys. Status Solidi B 88, K165 (1978).
19. A. A. Uzakov and A. L. Éfros, Zh. Éksp. Teor. Fiz. 81, 1940 (1981).
20. A. G. Zabrodskiǐ, A. G. Andreev, and S. V. Egorov, Phys. Status Solidi B 205, 61 (1998).
21. P. Nagels, in Topics in Applied Physics, Vol. 36, Amorphous Semiconductors, Ed. by M. Brodsky (Springer, Berlin, 1979; Mir, Moscow, 1982), pp. 146-200.
22. D. R. Cox and W. L. Smith, Queues (London, 1961; Mir, Moscow, 1966)
23. P. Whitle, Probability (Penguin, Cambridge, 1970; Nauka, Moscow, 1982).
24. A. S. Davydov, Quantum Mechanics (Nauka, Moscow, 1973).
25. E. O. Kane, in Tunneling Phenomena in Solids, Ed. by E. Burstein and S. Lundquist (Plenum, New York, 1969; Mir, Moscow, 1973), p. 9.
26. R. Landauer and Th. Martin, Rev. Mod. Phys. 66, 217 (1994).
27. A. G. Zabrodskiǐ, Usp. Fiz. Nauk 168, 804 (1998).
28. D. Adler, in Handbook on Semiconductors, Ed. by T. S. Moss (North-Holland, Amsterdam, 1982), Vol. 1, p. 805.
29. A. G. Zabrodskiǐ and M. V. Alekseenko, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 28, 168 (1994).
30. J. A. Chroboczek, H. Fritzsche, C.-L. Jiang, et al., Phil. Mag. B 44, 685 (1981).
31. A. P. Gadzhiev and I. S. Shlimak, Fiz. Tekh. Poluprovodn. (Leningrad) 6, 1582 (1972).
32. A. G. Andreev, V. V. Voronkov, G. I. Voronkova, et al., Fiz. Tekh. Poluprovodn. (S.-Peterburg) 29, 2218 (1995).
33. T. G. Castner, N. K. Lee, H. S. Tan, et al., J. Low Temp. Phys. 38 (3-4), 447 (1980).
34. T. M. Lifshitz, Prib. Tekh. Éksper., No. 1, 10 (1993).
35. H. Fritzsche and M. Cuevas, in Proc. Int. Conf. Semicond. Phys. (Pub. Czech. Acad. Sci., Prague, 1961), p. 222.
36. H. C. Thomas and B. Covington, J. Appl. Phys. 48, 3434 (1977).
37. H. Kahlert, G. Landwehr, A. Schlachetzki, et al., Z. Phys. B 24, 361 (1976).
38. D. Lemoine, C. Pelletier, S. Rolland, et al., Phys. Lett. A 56, 493 (1976).