A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation

Semiconductors

Volumn 33, Issue 4, 1999, Pages 402-406

  Poklonskii N A ^a   Syaglo, A I ^a   Biskupski, G ^b  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033116146     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187702     Document Type: Article

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