Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping

IEEE Transactions on Nuclear Science

Volumn 56, Issue 3, 2009, Pages 791-794

  Bolotnikov, A E ^a   Camarda, G S ^a   Cui, Y ^a   Hossain, A ^a   Yang, G ^a   Yao, H W ^a   James, R B ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

CdZnTe; Crystal defects; Radiation detectors

Indexed keywords

CDZNTE; CDZNTE DETECTORS; DEFOCUSING; ELECTRIC FIELD LINES; EXTENDED DEFECT; FOCUSING EFFECT; HIGH SPATIAL RESOLUTION; INTERNAL ELECTRIC FIELDS; LARGE ASPECT RATIO; MULTI-PIXEL DEVICES; NONUNIFORMITY; RESIDUAL STRAINS; THICKNESS-TO-WIDTH RATIO; X-RAY MAPPING;

ASPECT RATIO; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTAL DEFECTS; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; RADIATION DAMAGE;

RADIATION DETECTORS;

EID: 67649158881     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2007904     Document Type: Article

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