Spatial inhomogeneity of donor bound exciton emission from ZnO nanostructures grown on Si

Nanotechnology

Volumn 20, Issue 25, 2009, Pages

  Biswas, Mahua ^a   Kwack, Ho Sang ^b   Dang, Le Si ^b   Henry, Martin O ^a   McGlynn, Enda ^a  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE EMISSIONS; CATHODOLUMINESCENCE SPECTROSCOPY; DONOR-BOUND EXCITON; INHOMOGENEITY; LOW TEMPERATURES; SPATIAL IN-HOMOGENEITY; SUFFICIENT CONDITIONS; VAPOUR-PHASE; WELL-ALIGNED; ZNO; ZNO NANOSTRUCTURES;

ALUMINUM; CORUNDUM; CRYSTAL STRUCTURE; EXCITONS; NANORODS; NANOSHEETS; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

EMISSION SPECTROSCOPY;

ALUMINUM; NANOMATERIAL; NANOROD; SILICON; ZINC OXIDE;

ARTICLE; CRYSTAL STRUCTURE; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY;

EID: 67649148101     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/25/255703     Document Type: Article

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