10-nm-thick quinary (AlCrTaTiZr)N film as effective diffusion barrier for Cu interconnects at 900 °c

Applied Physics Letters

Volumn 94, Issue 23, 2009, Pages

  Chang, Shou Yi ^a   Chen, Dao Sheng ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATRICES; CU-INTERCONNECTS; DIFFUSION BARRIER LAYERS; DIFFUSION RESISTANCE; DOMINANT FACTOR; EFFECTIVE DIFFUSION; HIGH TEMPERATURE; INTER-DIFFUSION; LATTICE DISTORTIONS; MULTIPLE ELEMENTS; NANO-COMPOSITE STRUCTURE; NANOCOMPOSITE FILM; NITRIDE FILMS; THERMALLY STABLE; ULTRA-THIN;

DIFFUSION BARRIERS; METALLIC FILMS; NANOCOMPOSITES; NITRIDES; OPTICAL INTERCONNECTS; SILICIDES;

COPPER;

EID: 67649136100     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3155196     Document Type: Article

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