Dielectric response of AlSb from 0.7 to 5.0 eV determined by in situ ellipsometry

Applied Physics Letters

Volumn 94, Issue 23, 2009, Pages

  Jung, Y W ^a   Ghong, T H ^a   Byun, J S ^a   Kim, Y D ^a   Kim, H J ^b,c   Chang, Y C ^b,c   Shin, S H ^d   Song, J D ^d  

^a Kyung Hee University   (South Korea)

^b RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^c University of Illinois at Urbana Champaign   (United States)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE CALCULATION; BULK DIELECTRIC; CRITICAL POINTS; DIELECTRIC RESPONSE; ENERGY REGIONS; GAAS; IN-SITU; IN-SITU ELLIPSOMETRY; PSEUDODIELECTRIC FUNCTIONS; SLATER-TYPE ORBITALS;

CRYSTAL GROWTH; MOLECULAR DYNAMICS; THICK FILMS;

MOLECULAR BEAMS;

EID: 67649099559     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3153127     Document Type: Article

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