Effect of postfabrication thermal annealing on the electrical performance of pentacene organic thin-film transistors

Synthetic Metals

Volumn 159, Issue 13, 2009, Pages 1277-1280

  Ahn, Taek ^a   Jung, Hoon ^a   Suk, Hye Jung ^a   Yi, Mi Hye ^a  

^a Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

Crystallinity; Organic thin film transistor; Pentacene; Thermal annealing

Indexed keywords

CRYSTALLINITY; ELECTRICAL MODIFICATION; ELECTRICAL PERFORMANCE; GRAIN SIZE; MOLECULAR ORDERING; ON/OFF RATIO; ORGANIC THIN FILM TRANSISTORS; ORGANIC THIN-FILM TRANSISTOR; PEAK INTENSITY; PENTACENE; PENTACENE FILM; PHYSICAL MODIFICATIONS; POST-FABRICATION; SYSTEMATIC INVESTIGATIONS; THERMAL ANNEALING; THERMALLY INDUCED; XRD PATTERNS;

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL SENSORS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 67449128235     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2009.02.023     Document Type: Article

References (19)

1. Dimitrakopoulos C.D., and Malenfant P.R.L. Adv. Mater. (Weinheim, Ger.) 14 (2002) 99
2. Horowitz G. J. Mater. Res. 19 (2004) 1946
3. Sirringhaus H. Adv. Mater. (Weinheim, Ger.) 17 (2005) 2411
4. Pyo S.M., Lee M.Y., Jeon J.H., Choi K.Y., Yi M.H., and Kim J.S. Adv. Funct. Mater. 15 (2005) 619
5. Baude P.F., Ender D.A., Haase M.A., Kelley T.W., Muyres D.V., and Theiss S.D. Appl. Phys. Lett. 82 (2003) 3964
6. Nelson S.F., Lin Y.Y., Gundlach D.J., and Jackson T.N. Appl. Phys. Lett. 72 (1998) 1854
7. Shankar K., and Kackson T.N. J. Mater. Res. 19 2004 (2003)
8. Ruiz R., Nickel B., Koch N., Feldman L.C., Haglund R.F., Kahn A., and Scoles G. Phys. Rev. B 67 (2003) 125406
9. Torsi L., Dodabalapur A., Lovinger A.J., Katz H.E., Ruel R., Davis D.D., and Baldwin K.W. Chem. Mater. 7 (1995) 2274
10. Viville P., Lazzaroni R., Bredas J.L., Moretti P., Samori P., and Biscarini F. Adv. Mater. 10 (1998) 57
11. Mattis B.A., Chang P.C., and Subramanian V. Mater. Res. Soc. Symp. Proc. 771 (2003) L10.35.1
12. Ye R., Baba M., Suzuki K., Ohishi Y., and Mori K. Jpn. J. Appl. Phys. 42 (2003) 4473
13. Kang S.J., Noh M., Park D.S., Kim H.J., Whang C.N., and Chang C.H. J. Appl. Phys. 95 (2004) 2293
14. Mayer A.C., Lloyd M.T., Herman D.J., Kasen T.G., and Malliaras G.G. Appl. Phys. Lett. 85 (2004) 6272
15. Shtein M., Mapel J., Benziger J.B., and Forrest S.R. Appl. Phys. Lett. 81 (2002) 268
16. Pyo S.M., Lee Y.J., Jeon J.H., Yi M.H., and Kwon S.K. J. Appl. Phys. 99 (2006) 073711
17. Halik M., Klauk H., Zschieschang U., Kriem T., Schmid G., and Radlik W. Appl. Phys. Lett. 81 (2002) 289
18. Chesterfield R.J., Newman C.R., Pappenfus T.M., Ewbank P.C., Haukaas M.H., Mann K.R., Miller L.L., and Frissbie C.D. Adv. Mater. 15 (2003) 1278
19. Klauk H., Halik M., Zschieschang U., Schmid G., and Radlik W. J. Appl. Phys. 92 (2002) 5259