Using electrochemistry to improve copper interconnects

Semiconductor International

Volumn 23, Issue 5, 2000, Pages

  Cunningham, James A ^a,b  

^a University of Texas ^*

^b UNIVERSITY OF TEXAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER FILM; COPPER INTERCONNECTS; ELECTROCHEMICAL DEPOSITION; ELECTROMIGRATION RESISTANCE;

ANNEALING; CHEMICAL POLISHING; COPPER; COSTS; ELECTROCHEMISTRY; ELECTRODEPOSITION; ELECTROMIGRATION; INTEGRATED CIRCUIT LAYOUT; IONS; METALLIC FILMS; POROSITY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 6744251985     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. S. Lopatin, et al, "Electroless Cu and Barrier Layers for Sub-half Micron Multilevel Interconnects," SPIE Proc., Vol. 3214, p. 21.
2. E.J. O'Sullivan, et al, "Electrolessly Deposited Diffusion Barriers for Microelectronics," IBM J of Research and Development, Vol. 42, No. 5, Sept, 1998, pg. 607.
3. U.S. Patent 4,181,760.
4. M. Bohr., "Interconnect Scaling - The Real Limiter to High Performance VLSI," IEDM Proc., 1991, pg. 241.
5. P. Ding, et al, "Copper Barrier, Seed Layer and Planarization Technologies," VMIC Proc , 1997, p. 87.
6. K. Takeda, et al. "Enhanced Dielectric Breakdown Lifetime of the Copper/Silicon Nitride/Silicon Dioxide Structure", IEEE Reliability Physics Symp., 1998, pg. 36.
7. C-K. Hu, et al, "Electromigration in 0.25 μm wide Cu line on W," Thin Solid Films, 308-309, 1997, p. 443.
8. E. Torikai, Y. Kawami, and K. Takenaka, Japanese Patent, Kokai Tokyo Koho 84-80766(1984).
9. G.O. Mallory, J.B. Hajdu, eds., Electroless Plating, American Electroplaters and Surface Finishers Society, Inc. and Noyes Publications, New York, (1990) p.437.
10. M.L Green, et al. "Chemical Vapor Deposition of Ruthenium and Rthenium Dioxide Films," J. Electrochem. Soc., Vol.132, No. 11, Nov. 1985, p. 2677.