Stress and strain in DLC films induced by electron bombardment

Vacuum

Volumn 83, Issue SUPPL.1, 2009, Pages

  Sniureviciute M ^a   Laurikaitiene, J ^a   Adliene, D ^a   Augulis, L ^a   Rutkuniene, Ž ^a   Jotautis, A ^a  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

Author keywords

Amorphous DLC films; Bonding structure; Electrons; Mechanical properties; Radiation effects

Indexed keywords

ACETYLENE GAS; AFM; AMORPHOUS DLC FILMS; BONDING STRUCTURE; DLC FILMS; ELECTRON BOMBARDMENTS; HIGH ENERGIES; HIGH-ENERGY ELECTRONS; HYDROGEN CONTENTS; HYDROGENATED DLC FILMS; INDUCED STRESS; LASER TECHNIQUES; MICRO-HARDNESS MEASUREMENTS; NANO-INDENTER; NETWORKING STRUCTURES; RADIUS OF CURVATURES; RAMAN SCATTERING SPECTROSCOPIES; SIGNIFICANT DETERIORATIONS; STRESS AND STRAINS; TECHNOLOGICAL CONDITIONS;

ACETYLENE; ATOMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONS; FILM GROWTH; HYDROGEN; LIGHTING; MECHANICAL PROPERTIES; RADIATION EFFECTS; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; STRENGTH OF MATERIALS;

AMORPHOUS FILMS;

EID: 67349284795     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.01.052     Document Type: Article

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