Chemical and electronic interface structure of spray pyrolysis deposited undoped and Al-doped ZnO thin films on a commercial Cz-Si solar cell substrate

Solar Energy Materials and Solar Cells

Volumn 93, Issue 8, 2009, Pages 1356-1365

  Gabas M ^a   Barrett, N T ^b   Ramos Barrado, J R ^a   Gota, S ^c   Rojas, T C ^d   Lopez Escalante M C ^e  

^a UNIVERSITY OF MÁLAGA   (Spain)

^b DIF   (France)

^c CEA SACLAY   (France)

^d INSTITUTO DE CIENCIA DE MATERIALES DE SEVILLA   (Spain)

^e Isofoton SA   (Spain)

Author keywords

Al doped ZnO; Silicon; Solar cell performance; Transparent conductive oxides

Indexed keywords

AL-DOPED ZNO; AL-DOPING; DEPOSITION TIME; DOPED FILMS; ELECTRONIC INTERFACE; FIXED CHARGES; INTERFACE LAYER; SI OXIDE; SI SOLAR CELLS; SI SUBSTRATES; SOLAR CELL PERFORMANCE; TEM; TRANSPARENT CONDUCTIVE OXIDES; ZINC SILICATE; ZNO; ZNO FILMS;

CHEMICAL VAPOR DEPOSITION; CRACKING (CHEMICAL); DIRECT METHANOL FUEL CELLS (DMFC); DOPING (ADDITIVES); METALLIC FILMS; OPTICAL FILMS; OXIDES; PHOTOELECTRON SPECTROSCOPY; PHOTOVOLTAIC CELLS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICATES; SILICON; SILICON SOLAR CELLS; SOLAR CELLS; SPRAY PYROLYSIS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC; ZINC OXIDE;

ALUMINUM;

EID: 67349278525     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.02.018     Document Type: Article

References (23)

1. Minami T. New n-type transparent conducting oxides. MRS Bull. 25 (2000) 38-44
2. Majumder S.B., Jain M., Dobal P.S., and Katiyar R.S. Investigations on solution derived aluminium doped zinc oxide thin films. Mater. Sci. Eng. B 103 (2003) 16-25
3. Haga K., Wijesena P.S., and Watanabe H. Group III impurity doped ZnO films prepared by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and oxygen. Appl. Surf. Sci. 169-170 (2001) 504-507
4. Lee J.Y., Choi Y.S., Choi W.H., Yeom H.W., Yoon Y.K., Kim J.H., and Im S. Characterization of films and interfaces in n-ZnO/p-Si photodiodes. Thin Solid Films 420-421 (2002) 112-116
5. Sheng S., Hao H., Diao H., Zeng X., Xu Y., Liao X., and Monchesky T.L. XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells. Appl. Surf. Sci. 253 (2006) 1677-1682
6. Liu Z.W., Sun C.W., Zhang Q.Y., Wang Y.N., Wu B., and Jin Z.X. Morphology and interface characteristics of ZnO films deposited at room temperature and 750 °C. Surf. Coat. Technol. 201 (2007) 5422-5426
7. Gabás M., Gota S., Ramos-Barrado J.R., Sánchez M., Barrett N.T., Avila J., and Sacchi M. Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft X-ray photoemission spectroscopy. Appl. Phys. Lett. 86 (2005) 042104-1-042104-3
8. 2 in ZnO/Si system. J. Phys.: Condens. Matter 15 (2003) L607-L613
9. Meier U., and Pettenkofer C. Morphology of the Si-ZnO interface. Appl. Surf. Sci. 252 (2005) 1139-1146
10. Ayouchi R., Martín F., Leinen D., and Ramos-Barrado J.R. Growth of pure ZnO thin films prepared by chemical spray pyrolysis on silicon. J. Cryst. Growth 247 (2003) 497-504
11. Romero R., López M.C., Leinen D., Martín F., and Ramos-Barrado J.R. Electrical properties of the n-ZnO/c-Si heterojunction prepared by chemical spray pyrolysis. Mater. Sci. Eng. B 110 (2004) 87-93
12. 〈http://www.phy.cuhk.edu.hk/~surface/XPSPEAK/〉.
13. R. Ayouchi, Caracterización de láminas delgadas de óxidos metálicos preparadas mediante pirólisis de aerosoles, Ph.D. Thesis, University of Málaga, 2005.
14. Klaska K.H., Eck J.C., and Pohl D. New investigations of willemite. Acta Crystallogr. Sec. B 34 (1978) 3324-3325
15. Maroie S., Haemers G., and Verbist J.J. Surface oxidation of polycrystalline α(75%Cu/25%Zn) and β(53%Cu/47%Zn) brass as studied by XPS: influence of oxygen pressure. Appl. Surf. Sci. 17 (1984) 463-476
16. 〈http://www.lasurface.com/〉.
17. Hashimoto S., Hirokawa K., Fukuda Y., Suzuki K., Suzuki T., Sezaki H., Usuki N., Gennai N., Yoshida S., Koda M., Hone H., Tanaka A., and Ohtsubo T. Change of X-ray photoelectron spectra by ion sputtering. Anal. Sci. 7 (1991) 341-344
18. 2-Si interface using core level photoemission. Appl. Phys. Lett. 44 (1984) 93-95
19. Carriere B., Deville J.P., Brion D., and Escard J. X-ray photoelectron study of some silicon-oxygen compounds. J. Electron. Spectrsc. Relat. Phenom. 10 (1977) 85-91
20. 2 interface by electron spectroscopies. Surf. Sci. 457 (2000) 199-210
21. Majumder S.B., Jain M., Dobal P.S., and Katiyar R.S. Investigations on solution derived aluminium doped zinc oxide thin films. Mater. Sci. Eng. B 103 (2003) 16-25
22. 2 interface by soft X-ray photoemission spectroscopy. Surf. Sci 566 (2004) 526-531
23. Zou C.W., Wu Y.Y., Sun B., Xu P.S., Pan H.B., and Xu F.Q. Photoemission studies of initial oxidation for ultra-thin zinc film on 6H-SiC(0 0 0 1) surface with synchrotron radiation. Appl. Surf. Sci. 253 (2007) 3761-3765