Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 812-815

  Vajpeyi, A P ^a,b   Ajagunna, A O ^a,b   Tsiakatouras, G ^a,b   Adikimenakis, A ^a,b   Iliopoulos, E ^a,b   Tsagaraki, K ^a,b   Androulidaki, M ^a,b   Georgakilas, A ^a,b  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

III nitrides NWs; RF MBE; Si(1 1 1)

Indexed keywords

CATALYST-FREE GROWTHS; CRYSTALLINITY; GROWTH CONDITIONS; HIGH SURFACE ENERGIES; III-NITRIDES NWS; OPTO-ELECTRONIC PROPERTIES; RF PLASMA SOURCES; RF-MBE; SI(1 1 1); SINGLE CRYSTALLINE NANOWIRES; SPONTANEOUS GROWTHS; WELL-ALIGNED; XRD;

CRYSTAL GROWTH; ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM NITRIDE; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SILICON; SURFACE CHEMISTRY; SURFACE TENSION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67349262053     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.01.078     Document Type: Article

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