Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1939-1941

  Matsumoto, T ^a   Asuha, ^a,c   Kim, W B ^a   Yamada, M ^a   Imai, S ^b   Terakawa, S ^a   Kobayashi, H ^a  

^a OSAKA UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

^c INNER MONGOLIA NORMAL UNIVERSITY   (China)

Author keywords

Gate oxide; Low temperature oxidation; MOS; Nitric acid oxidation; Silicon oxide; Thin film transistor

Indexed keywords

ASYMMETRIC STRETCHING; ATOMIC DENSITY; GATE OXIDE; INTERFACE STATE; LONGITUDINAL OPTICAL PHONONS; LOW TEMPERATURE FORMATION; LOW TEMPERATURE OXIDATION; LOW TEMPERATURES; LOW-LEAKAGE CURRENT; MOS; NITRIC ACID OXIDATION; POLY-CRYSTALLINE SILICON; POLY-SI; POST-METALLIZATION ANNEALING; SI(1 0 0); THERMAL OXIDES; VIBRATIONAL FREQUENCIES;

ACIDS; GATES (TRANSISTOR); HYDROGEN; NITRIC ACID; OXIDATION; PNEUMATIC CONTROL EQUIPMENT; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS;

SILICON OXIDES;

EID: 67349256799     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.080     Document Type: Article

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