Properties of thermally annealed ruthenium thin films grown on seed layers in a low-temperature selective deposition region

Current Applied Physics

Volumn 9, Issue 2 SUPPL., 2009, Pages

  Vasilyev, Vladislav Yu ^a   Mogilnikov, Konstantin P ^b   Song, Yong Won ^a  

^a Korea Polytechnic University   (South Korea)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Rapid and long time anneal; Resistivity; Ruthenium; Selective chemical vapor deposition

Indexed keywords

FILM MORPHOLOGY; FILM SHRINKAGE; LOW TEMPERATURES; NITROUS OXIDE; PD ALLOY; RAPID AND LONG-TIME ANNEAL; RESISTIVITY; RU FILM; SEED LAYER; SELECTIVE CHEMICAL VAPOR DEPOSITION; SELECTIVE DEPOSITION; SELECTIVE GROWTH;

AGGLOMERATION; CHEMICAL VAPOR DEPOSITION; HYDROGEN; INTERNET PROTOCOLS; MORPHOLOGY; NITROGEN OXIDES; PALLADIUM; PLATINUM; PLATINUM ALLOYS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; RUTHENIUM; RUTHENIUM ALLOYS; THERMOANALYSIS; VAPORS;

SURFACE MORPHOLOGY;

EID: 67349253814     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.12.046     Document Type: Article

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