Tunneling in long-wavelength infrared HgCdTe photodiodes

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1399-1402

  Krishnamurthy, S ^a   Berding, M A ^a   Robinson, H ^a   Sher, A ^b  

^a SRI INTERNATIONAL   (United States)

^b Sher Consulting   (United States)

Author keywords

Current voltage (I V) curve; HgCdTe; Long wavelength infrared; Piezoelectric effect; Trap assisted tunneling

Indexed keywords

CURRENT-VOLTAGE (I-V) CURVE]; HGCDTE; LONG-WAVELENGTH INFRARED; TRAP-ASSISTED TUNNELING;

CADMIUM; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; MERCURY (METAL); PIEZOELECTRICITY; PROBABILITY; TELLURIUM;

PHOTODIODES;

EID: 33746216350     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0274-y     Document Type: Conference Paper

References (8)

1. E.O. Kane, J. Appl. Phys. 32, 83 (1961).
2. C.T. Sah, Phys. Rev. 123, 1594 (1961).
3. J. Wong, IEEE Trans. Elec. Dev. ED 27, 48 (1980).
4. M.A. Kinch, Semiconductors and Semimetals, ed. R.K. Willardson and A.C. Beer (New York: Academic Press, 1981), Vol. 18, p. 336.
5. Y. Nemirovsky, R. Fastaw, M. Meyassed, and A. Unikovsky, J. Vac. Sci. Technol. B9, 1829 (1991).
6. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. (New York: Wiley, 1981).
7. A. Sher and H. Primakoff, Phys. Rev. 119, 178 (1960).
8. C.F. Wan, J.D. Luttmer, R.S. List, and R.L. Strong, J. Electron. Mater. 24, 1293 (1995).