Synthesis and characterization of quaternary chalcogenides InSn2Bi3Se8 and In0.2Sn6Bi1.8Se9

Journal of Solid State Chemistry

Volumn 182, Issue 6, 2009, Pages 1450-1456

  Wang, Ming Fang ^a   Jang, Shyue Ming ^b   Huang, Jih Chen ^b   Lee, Chi Shen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Bismuth; Chalcogenide; Indium; Quaternary; Tin

Indexed keywords

ELECTRICAL CONDUCTIVITY; ISOSTRUCTURAL; MONOCLINIC SPACE GROUPS; NARROW BAND GAP; ORTHORHOMBIC SPACE GROUPS; QUATERNARY; SEMI-CONDUCTING PROPERTY; STOICHIOMETRIC RATIO; SYNTHESIS AND CHARACTERIZATION; THREE-DIMENSIONAL FRAMEWORKS;

BISMUTH; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; INDIUM; LEAD; PHASE CHANGE MEMORY; SINGLE CRYSTALS; SODIUM CHLORIDE; SYNTHESIS (CHEMICAL); TIN;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 67349202840     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2009.03.013     Document Type: Article

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