High-Tc ferromagnetism in p-type ZnO diluted magnetic semiconductors

Physica A: Statistical Mechanics and its Applications

Volumn 388, Issue 17, 2009, Pages 3433-3441

  Mounkachi, O ^a,b   Benyoussef, A ^a,c,d   El Kenz, A ^a   Saidi, E H ^a,c,d   Hlil, E K ^b  

^a FACULTÉ DES SCIENCES   (Morocco)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^c HASSAN II ACADEMY OF SCIENCE AND TECHNOLOGY   (Morocco)

^d MAScIR   (Morocco)

Author keywords

Band gap; Bound magnetic polarons; Carrier mediated ferromagnetism; Curie temperature; Diluted magnetic semiconductors; Effective field theory; First principle calculations; RKKY

Indexed keywords

CURIE TEMPERATURE; DILUTED MAGNETIC SEMICONDUCTORS; ENERGY GAP; FERROMAGNETISM; II-VI SEMICONDUCTORS; LIGHT TRANSMISSION; MANGANESE COMPOUNDS; MATHEMATICAL OPERATORS; OXIDE MINERALS; OXIDE SEMICONDUCTORS; POLARONS; TECHNETIUM COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

BOUND MAGNETIC POLARONS; CARRIER-MEDIATED; EFFECTIVE FIELD THEORY; FIRST PRINCIPLE CALCULATIONS; RKKY;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 67349178849     PISSN: 03784371     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physa.2009.04.035     Document Type: Article

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