Carrier-mediated ferromagnetism in N co-doped (Zn, Mn)O-based diluted magnetic semiconductors

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 365, Issue 3, 2007, Pages 231-234

  Maouche, D ^a   Ruterana, P ^b   Louail, L ^a  

^a FERHAT ABBAS UNIVERSITY   (Algeria)

^b CNRS   (France)

Author keywords

DMS; Ferromagnetism; First principle calculations; ZnO

Indexed keywords

CALCULATIONS; DILUTED MAGNETIC SEMICONDUCTORS; ELECTRONIC STRUCTURE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GLASS; GROUND STATE; II-VI SEMICONDUCTORS; LOCAL DENSITY APPROXIMATION; MANGANESE COMPOUNDS; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTOR DOPING; SPIN GLASS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

COHERENT-POTENTIAL APPROXIMATION; ELECTRONIC STRUCTURE CALCULATIONS; EXCHANGE-CORRELATION ENERGY FUNCTIONALS; FERROMAGNETIC STATE; FIRST PRINCIPLE CALCULATIONS; FIRST PRINCIPLES ELECTRONIC STRUCTURE; HALF METALLIC FERROMAGNETS; KORRINGA-KOHN-ROSTOKER;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 34147124944     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2007.01.014     Document Type: Article

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