Capacitance oscillations in cylindrical nanowire gate-all-around MOS devices at low temperatures

IEEE Electron Device Letters

Volumn 30, Issue 4, 2009, Pages 395-397

  Chin, S K ^a   Ligatchev, V ^a  

^a INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

Gate all around; MOS; Nanowire (NW); Schrodinger Poisson (SP)

Indexed keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS; CYLINDRICAL NANOWIRES; ELECTRON DENSITIES; GATE ALL AROUND; GATE CAPACITANCES; GATE VOLTAGES; LOW TEMPERATURES; MOS; NANOWIRE (NW); NON UNIFORMITIES; QUANTUM CORRECTIONS; QUANTUM TREATMENTS; SCHRODINGER-POISSON (SP); TRANSVERSE CONFINEMENTS;

CAPACITANCE; MOSFET DEVICES; MOTION ESTIMATION; NANOWIRES; POISSON DISTRIBUTION; POISSON EQUATION;

MOS DEVICES;

EID: 67349169488     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2013975     Document Type: Article

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