Electrical characterization of metal-ferroelectric (Mn-substituted BiFeO3)-insulator (HfO2)-semiconductor capacitors for nonvolatile memory applications

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1845-1848

  Juan, Pi chun ^a   Wang, Chen Hao ^a  

^a MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

BiFeO3; HfO2; Memory window

Indexed keywords

ANNEALING TEMPERATURES; ATOM RATIO; BIFEO3; CO-SPUTTERING TECHNIQUES; ELECTRICAL CHARACTERIZATION; FE-IONS; HFO2; MEMORY WINDOW; NON-VOLATILE MEMORY APPLICATION; SEMICONDUCTOR CAPACITORS; X RAY PHOTOELECTRON SPECTRA;

ATOMIC SPECTROSCOPY; BINDING ENERGY; FERROELECTRICITY; HAFNIUM COMPOUNDS; IRON COMPOUNDS; MANGANESE; MANGANESE COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; WINDOWS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 67349143598     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.007     Document Type: Article

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