The role of In2Se3 precursor properties in multi-stage Cu(In,Ga)Se2 fabrication

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 684-687

  Eisgruber, I L ^a   Treece, R E ^a   Marshall, C ^b   Engel, J R ^c  

^a ITN ENERGY SYSTEMS INC   (United States)

^b LOCKHEED MARTIN   (United States)

^c Materials Research Group Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GALLIUM; INDIUM;

CU (IN ,GA)SE; DEVICE PERFORMANCE; FLUX RATIO; IMPACT DEVICE; MULTI STAGE;

COPPER;

EID: 84949545317     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915958     Document Type: Conference Paper

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